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tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors product information 1 july 2000 - revised december 2001 copyright ? 2001, power innovations limited, uk information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters. telecommunication system 30 a 10/1000 overvoltage protectors a bourns company ion-implanted breakdown region precise and stable voltage rated for international surge wave shapes sma (do-214ac) package 25 % smaller placement area than smb device v drm v v (bo) v ?4070 58 70 ?4080 65 80 ?4090 70 90 ?4125 100 125 ?4145 120 145 ?4165 135 165 ?4180 145 180 ?4220 160 220 ?4240 180 240 ?4260 200 260 ?4290 230 290 ?4320 240 320 ?4350 275 350 ?4360 290 360 ?4395 320 395 wave shape standard i tsp a 2/10 s gr-1089-core 125 8/20 s iec 61000-4-5 100 10/160 s fcc part 68 65 10/700 s itu-t k20/21 50 10/560 s fcc part 68 40 10/1000 s gr-1089-core 30 description these devices are designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the ring and tip wires for telephones and modems). combinations of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides. how to order device package carrier order # tisp4xxxl3aj sma (do-214ac) embossed tape reel pack tisp4xxxl3ajr device symbol t r sd4xaa t erminals t and r correspond to the alternative line designators of a and b mdxxcc smaj package (top view) 12 r (b) t (a)
tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors 2 july 2000 - revised december 2001 product information this tisp4xxxl3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 v to 320 v). they are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. these protection devices are in an smaj (jedec do-214ac with j-bend leads) plastic package. these devices are supplied in embossed tape reel carrier pack. for alternative voltage and holding current values, consult the factory. for higher rated impulse currents, the 50 a 10/1000 tisp4xxxm3aj series in sma and the 100 a 10/1000 tisp4xxxh3bj series in smb are available. absolute maximum ratings, t a = 25 c (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage, (see note 1) ?4070 ?4080 ?4090 ?4125 ?4145 ?4165 ?4180 ?4220 ?4240 ?4260 ?4290 ?4320 ?4350 ?4360 ?4395 v drm 58 65 70 100 120 135 145 160 180 200 230 240 275 290 320 v non-repetitive peak on-state pulse current (see notes 2, 3 and 4) i tsp a 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 125 8/20 s (iec 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 100 10/160 s (fcc part 68, 10/160 s voltage wave shape) 65 5/310 s (itu-t k20/21, 10/700 s voltage wave shape) 50 5/310 s (ftz r12, 10/700 s voltage wave shape) 50 10/560 s (fcc part 68, 10/560 s voltage wave shape) 40 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) 30 non-repetitive peak on-state current (see notes 2, 3 and 4) i tsm 18 7 1.6 a 20 ms (50 hz) full sine wave 1 s (50 hz) full sine wave 1000 s 50 hz/60 hz a.c. junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. for voltage values at lower temperatures derate at 0.13 %/c. 2. initially the tisp4xxxl3 must be in thermal equilibrium with t j =25c. 3. the surge may be repeated after the tisp4xxxl3 returns to its initial conditions. 4. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. derate current values at -0.61 %/c for ambient temperatures above 25 c recommended operating conditions component min typ max unit r s series resistor for fcc part 68, 10/560 type a surge survival 12 ? series resistor for fcc part 68, 9/720 type b surge survival 0 ? series resistor for gr-1089-core first-level and second-level surge survival 23 ? series resistor for k.20, k.21 and k.45 1.5 kv, 10/700 surge survival 0 ? series resistor for k.20, k.21 and k.45 coordination with a 400 v primary protector 7 ?
3 july 2000 - revised december 2001 tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors product information electrical characteristics for the t and r terminals, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) breakover voltage dv/dt = 750 v/ms, r source = 300 ? ?4070 ?4080 ?4090 ?4125 ?4145 ?4165 ?4180 ?4220 ?4240 ?4260 ?4290 ?4320 ?4350 ?4360 ?4395 70 80 90 125 145 165 180 220 240 260 290 320 350 360 395 v i (bo) breakover current dv/dt = 750 v/ms, r source = 300 ? 0.8 a i h holding current i t = 5 a, di/dt = +/-30 ma/ms 0.15 0.6 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5 kv/s i d off-state current ?4070, v d =52v ?4080, v d =59v ?4090, v d =63v ?4125, v d =90v ?4145, v d = 108 v ?4165, v d = 122 v ?4180, v d = 131 v ?4220, v d = 144 v ?4240, v d = 162 v ?4260, v d = 180 v ?4290, v d = 207 v ?4320, v d = 216 v ?4350, v d = 248 v ?4360, v d = 261 v ?4395, v d = 288 v 2 a i d off-state current v d =50v 10 a c off off-state capacitance f=1mhz, v d =1v rms, v d =1v f=1mhz, v d =1v rms, v d =50v ?4070 thru ?4090 ?4125 thru ?4220 ?4240 thru ?4395 ?4070 thru ?4090 ?4125 thru ?4220 ?4240 thru ?4395 53 40 33 25 18 14 64 48 40 30 22 17 pf
tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors 4 july 2000 - revised december 2001 product information thermal characteristics parameter test conditions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c, (see note 5) 125 c/w 265 mm x 210 mm populated line card, 4-layer pcb, i t = i tsm(1000) , t a = 25 c 60 note 5: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
5 july 2000 - revised december 2001 tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors product information parameter measurement information figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal -v v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaab v drm i drm
tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors 6 july 2000 - revised december 2001 product information typical characteristics figure 2. figure 3. figure 4. figure 5. off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - a 0001 001 01 1 10 tc4lag v d = 50 v normalised breakover voltage vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 normalised breakover voltage 0.90 0.95 1.00 1.05 1.10 1.15 tc4laf on-state current vs on-state voltage v t - on-state voltage - v 0.7 1.5 2 3 4 5 7 110 i t - on-state current - a 0.5 0.7 1.5 2 3 4 5 7 15 20 30 40 50 1 10 t a = 25 c t w = 100 s tc4mam '4070 thru '4090 '4125 thru '4220 '4240 thru '4395 normalised holding current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 normalised holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4lad
7 july 2000 - revised december 2001 tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors product information typical characteristics figure 6. figure 7. figure 8. normalised capacitance vs off-state voltage v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100150 capacitance normalised to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 tc4labc '4070 thru '4090 '4240 thru '4395 '4125 thru '4220 t j = 25 c v d = 1 vrms differential off-state capacitance vs rated repetitive peak off-state voltage v drm - repetitive peak off-state voltage - v 50 60 70 80 90 150 200 250 300 350 100 ? ? ? ? c - differential off-state capacitance - pf 10 15 20 25 30 ? ? ? ? c = c off(-2 v) - c off(-50 v) tclaeb typical capacitance asymmetry vs off-state voltage v d ? off-state voltage ? v 23457 20304050 110 |c off(+vd) - c off(-vd) | ? capacitance asymmetry ? pf 0 1 v d = 1 v rms, 1 mhz v d = 10 mv rms, 1 mhz tc4lbb
tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors 8 july 2000 - revised december 2001 product information rating and thermal information figure 9. figure 10. non-repetitive peak on-state current vs current duration t - current duration - s 0.01 0.1 1 10 100 i tsm(t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 10 ti4lai v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c v drm derating factor vs minimum ambient temperature t amin - minimum ambient temperature - c -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4ladb '4070 thru '4090 '4125 thru '4220 '4240 thru '4395
9 july 2000 - revised december 2001 tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors product information mechanical data recommended printed wiring land pattern dimensions. device symbolization code devices will be coded as below. as the device parameters are symmetrical, terminal 1 is not identified. carrier information for production quantities the carrier will be embossed tape reel pack. evaluation quantities may be shipped in bulk pack or embossed tape. device symbolization code tisp4070l3 4070l tisp4080l3 4080l tisp4090l3 4090l tisp4125l3 4125l tisp4145l3 4145l tisp4165l3 4165l tisp4180l3 4180l tisp4220l3 4220l tisp4240l3 4240l tisp4260l3 4260l tisp4290l3 4290l tisp4320l3 4320l tisp4350l3 4350l tisp4360l3 4360l tisp4395l3 4395l carrier standard quantity embossed tape reel pack 5 000 sma land pattern mdxxbic all linear dimensions in millimeters and parenthetically in inches 2,34 [.092] 1,90 [.075] 2,16 [.085]
tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors 10 july 2000 - revised december 2001 product information mechanical data smaj (do-214ac) plastic surface mount diode package this surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. sma mdxxcaa 4,57 [.180] 4,06 [.160] 5,59 [.220] 4,83 [.190] 2,92 [.115] 2,29 [.090] 2,40 [.095] 2,00 [.079] 2,16 [.085] 1,58 [.062] 1,52 [.060] 0,76 [.030] 0,20 [.008] 0,10 [.004] 1,63 [.064] 1,27 [.050] 2 index mark (if needed) all linear dimensions in millimeters and parenthetically in inches
11 july 2000 - revised december 2001 tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors product information mechanical data tape dimensions notes: a. the clearance between the component and the cavity must be within 0,05 mm (.002 in) min. to 0,65 mm (.026 in) max. so that the component cannot rotate more than 20 within the determined cavity. b. taped devices are supplied on a reel of the following dimensions:- reel diameter: 330 mm 3,0 mm (12.99 in .12 in) reel hub diameter 75 mm (2.95 in) min. reel axial hole: 13,0 mm 0,5 mm (.51 in .02 in) c. 5 000 devices per reel. mdxxcga index mark (if needed) 4,10 [.161] 3,90 [.154] 4,50 [.177] max. sma package single-sprocket tape all linear dimensions in millimeters and parenthetically in inches direction of feed 0 min. 12,30 [.484] 11,70 [.461] 1,65 [.065] 1,55 [.061] 4,10 [.161] 3,90 [.154] 2,05 [.081] 1,95 [.077] 1,5 [.059] min. carrier tape embossment 5,55 [.219] 5,45 [.215] 1,85 [.073] 1,65 [.065] cover tape 8,20 [.323] max. 20 typical component cavity centre line maximum component rotation typical component centre line 0,40 [.016] max.
tisp4070l3aj thru tisp4395l3aj bidirectional thyristor overvoltage protectors 12 july 2000 - revised december 2001 product information important notice power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support t his warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. pi assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. pi semiconductor products are not designed, intended, authorised, or warranted to be suitable for use in life-support applications, devices or systems. copyright ? 2001, power innovations limited

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